Extended Data Fig. 7: Stability of Sb \((01\bar{1}2)\)-MoS2 contact.
From: Approaching the quantum limit in two-dimensional semiconductor contacts
a, Thermal stability of Ion for Sb and Bi contact measured at different time in 125 °C nitrogen environment. b, Transfer characteristics of a typical Sb-contact MoS2 FET measured Lc = 100 nm, Vds = 1V. c, d, The output characteristics of the same device in the initial state (c) and after 24 h (d). From bottom to up, Vgs = −2 V to 10 V with 2 V step. e, Transfer characteristics of a typical Bi-contact MoS2 FET measured at different time in 125 °C nitrogen environments. Lc = 100 nm, Vds = 1V. f, g, The output characteristics of the same device at 125 °C in the initial state (f) and after 24 h (g). From bottom to up, Vgs = −2 V to 10 V with 2 V step.
