Extended Data Fig. 8: Short-channel MoS2 FETs with Sb \((01\bar{1}2)\)-contact.
From: Approaching the quantum limit in two-dimensional semiconductor contacts
a, Transfer characteristics of a MoS2 FET with Lc = 40 nm under Vds = 0.2 V and 1 V. Inset shows the corresponding SEM image. Scale bar, 500 nm. b, The output characteristics of the same devices in a. From bottom to up, Vgs = −2 V to 10 V with 2 V step. The solid and dotted lines are the results of the DC and pulse I-V measurements, respectively. c, Transfer characteristics of a MoS2 FET with Lc = 20 nm under Vds = 0.2 V and 1 V. Inset shows the corresponding SEM image. Scale bar, 500 nm. d, The output characteristics of the same devices in c. From bottom to up, Vgs = −2 V to 10 V with 2 V step. The solid and dotted lines are the results of the DC and pulse I-V measurements, respectively.
