Extended Data Fig. 2: The atomic-projected electronic band structures and the charge density near EF of TMDs-Sb contact. | Nature

Extended Data Fig. 2: The atomic-projected electronic band structures and the charge density near EF of TMDs-Sb contact.

From: Approaching the quantum limit in two-dimensional semiconductor contacts

Extended Data Fig. 2: The atomic-projected electronic band structures and the charge density near EF of TMDs-Sb contact.

a–f, Left panels, atomic-projected electronic band structures (left panel) of MoSe2-Sb (\(01\bar{1}2\)) (a), WS2-Sb (\(01\bar{1}2\)) (c), WSe2- Sb (\(01\bar{1}2\)) (e), MoSe2-Sb (0001) (b), WS2-Sb (0001) (d) and WSe2-Sb (0001) (f) contacts. Right panels, charge density near EF of MoSe2-Sb (\(01\bar{1}2\)) (a), WS2-Sb (\(01\bar{1}2\)) (c), WSe2- Sb (\(01\bar{1}2\)) (e), MoSe2-Sb (0001) (b), WS2-Sb (0001) (d) and WSe2-Sb (0001) (f) contacts. The corresponding isosurface level of the charge density near EF (right panel) are 1.3×10−4 e/Bohr3 for MoSe2-Sb contact (a, b), 8×10−5 e/Bohr3 for WS2-Sb (c, d) and WSe2-Sb (e, f) contact, respectively.

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