Extended Data Fig. 3: Optical, chemical and structural characterization of Sb-MoS2 interface.
From: Approaching the quantum limit in two-dimensional semiconductor contacts
a, The Low-temperature (6 k) PL spectra of. After depositing Sb film, the main exciton peak did not show widening, and no obvious defect-related emissions were observed. This proved that the deposition of Sb was friendly to 2D materials without creating defects. The sharp peak at 1.79 eV was the photoluminescence signal from the sapphire substrate. b, High-resolution XPS spectra of 2 nm Sb deposited on monolayer MoS2/sapphire, where the absence of Sb–S bond signal from Sb2S3 indicates no chemical bond formation between Sb and MoS2. c, Cross-section HAADF-STEM image of Sb (0001)-MoS2 contact. Scale bar, 1 nm. d, Zoom-in atomic-resolution image from c. The interplane distance was 0.379 nm. Scale bar, 1 nm.
