Extended Data Fig. 4: Schottky barrier extraction and small footprint MoS2 FETs.
From: Approaching the quantum limit in two-dimensional semiconductor contacts
a, The temperature-dependent Ids-Vgs transfer curves of Sb (\(01\bar{1}2\))-MoS2 FET. Vds = 0.1V. b, The Arrhenius plot at various gate bias of the same device in a. c, Gate voltage dependence of the barrier height. The deviation from the linear trend (red solid line) defines the flat band voltage and shows negative Schottky barrier height. Inset shows the linear output curves of the same FET at a low temperature of 50 K with excellent linearity. d, The temperature-dependent Ids-Vgs transfer curves of Sb (0001)-MoS2 FET. Vds = 0.1V. e, The Arrhenius plot at various gate bias of the same device in d. f, Gate voltage dependence of the barrier height. The deviation from the linear trend (red solid line) defines the flat band voltage and shows positive Schottky barrier height. g, Transfer curves of two MoS2 FETs with the same Lc = 60 nm but with contact length (Lcontact) of 60 nm and 1 μm. Vds = 0.1 V. Inset is the false-colour SEM image of the device. Scale bar, 200 nm. h–i, Output curves of the MoS2 FET with contact length of 1 μm (h) and 60 nm (i), respectively.
