Extended Data Fig. 7: Evaluation of the effect of trench edge on confined BL-WSe2.
From: Non-epitaxial single-crystal 2D material growth by geometric confinement
a,b STEM images of BL-WSe2 grown at the edge (a) and centre (b) of SiO2 trench. The BL-WSe2 grown at the edge of the trench shows no difference from that at the centre, showing no obvious step bunching, distortions, or curling of BL-WSe2 due to possible strain that can be imposed by the edge.
