Extended Data Fig. 8: Yield estimation and statistical analysis on FETs fabricated with confined BL-WSe2.
From: Non-epitaxial single-crystal 2D material growth by geometric confinement
a, Schematic of wafer enabling to estimate a yield of 93.9% (200/213). Each denoted top region (red), bottom region (blue), left region (orange), and right region (violet) on the wafer includes 43 dies, and denoted centre region (black) on the wafer includes 41 dies. In each die, a centre-located FET was investigated for estimating yield. Coloured and ‘X’-marked dies denote good and defective dies, respectively. b–f, Statistical analysis on 200 FETs fabricated with confined BL-WSe2, where field-effect mobility (b), on current (c), subthreshold slope (d), current on/off ratio (e), and threshold voltage (f) were extracted and investigated. g, Summary table for performance labels.
