Extended Data Fig. 5: Characterization of confined single-domain WSe2.
From: Non-epitaxial single-crystal 2D material growth by geometric confinement

a, AFM morphology of confined ML-WSe2. b, Root-mean-square (RMS) roughness in a cropped image of a confined ML-WSe2. c, Plan-view HAADF-STEM image of confined ML-WSe2. From plan-view STEM images, selenium vacancy was observed as the dominant point defect with a density of roughly less than 1% (~1.6 × 1013 cm−2). d,e, The atomic percentages of W 4f (d) and Se 3d (e) were 33.72% and 66.28%, respectively by XPS, confirming stoichiometric ratios, and the peak positions of W (4f5/2 and 4f7/2) and Se (3d3/2 and 3d5/2) were 34.8, 32.6, 55.7 and 55 eV, respectively. This result matches well with pure single-crystalline WSe232.