Extended Data Fig. 7: Dynamic performance of electronic metadevices under harsh switching conditions.
a, Schematic of the experimental setup to evaluate the dynamic performance of the metadevices under harsh switching conditions. b, Measured reflection (S11) from the device, under burst conditions. The device is relaxed for 10 ms followed by a sequence of 100 switching cycles. The measurement corresponds to the switching amplitude of 20 V. c, Measured reflection in a time period of 10 µs. At each period, the device holds a stress for about 4 µs, and then goes to the ON state for about 500 ns. The ON resistance of the device is extracted based on the reflection coefficient. d, Extracted ON resistance of the device (normalized by the reference resistance of the relaxed device, as shown in part b) for different amplitudes over the 100 cycles. Without any passivation, the device shows a very good performance with only a negligible RON degradation. e, Waveforms in a double-sweep experiment to evaluate possible hysteresis in the threshold voltage. The device is submitted to a large signal voltage and the reflection is measured in both switching cycles (ramp up and ramp down). f, Extracted double-sweep reflection showing a hysteresis-free operation.
