Extended Data Fig. 1: Port definition and electric field patterns and current densities in metadevices.
a, Three-dimensional schematic of a straight-gap device showing the integration of the two terminals with a coplanar waveguide. The ports are defined in between the terminals and the ground pads. Simulated vertical electric field (real part) at the barrier in the b, ON state and c, OFF state. The lateral depletion length due to fringing fields72 in the OFF state was considered to be 20 nm. The field pattern in the OFF state does not exhibit the oscillatory shape. It can be seen that an electrostatic voltage can control electromagnetic interactions in the devices, which is the basis for the switching mechanism in electronic metadevices. Simulated current density (absolute value) at the semiconductor channel in the d, ON state, and e, OFF state. The current density in the OFF state does not show any confinement. f, Real and g, imaginary parts of the current density at the barrier (Jz) in the ON state. The real part of the input current is totally dominant in the ON state, which makes the device impedance to be resistive. h, Real and i, imaginary parts of the current density at the barrier (Jz) in the OFF state. The imaginary part of the input current is dominant in the OFF state, which makes the device impedance mostly reactive.
