Extended Data Fig. 6: Si TFTs on silicon-on-insulator wafer.
From: Vertical full-colour micro-LEDs via 2D materials-based layer transfer
a, b, Optical microscopy images of a 30 × 30 array of silicon TFTs fabricated on silicon-on-insulator wafer. Each TFT has dimensions of 2.2 μm × 9.2 μm. c, Transfer characteristics of the silicon TFT with W/L of 1.5 μm/2.2 μm, driven at VDS of 2 V. d, Output characteristics of a Si TFT showing current saturation at VGS values ranging from 0.5 V to 2.5 V.
