Extended Data Fig. 6: Dual epitaxy of vertical 2D fin-oxide heterostructure arrays on diverse insulating substrates. | Nature

Extended Data Fig. 6: Dual epitaxy of vertical 2D fin-oxide heterostructure arrays on diverse insulating substrates.

From: 2D fin field-effect transistors integrated with epitaxial high-k gate oxide

Extended Data Fig. 6: Dual epitaxy of vertical 2D fin-oxide heterostructure arrays on diverse insulating substrates.The alternative text for this image may have been generated using AI.

Using chemical vapour synthesis, the 2D layered Bi2O2Se fins are first epitaxially prepared as backbones and then partially and intercalatively oxidized into 2D layered Bi2O2Se/Bi2SeO5 fin-oxide heterostructure arrays on LaAlO3 (100) (a,b), MgO (110) (c,d), CaF2 (110) (e,f), LaAlO3 (110) (g,h), SrTiO3 (110) (i,j) and KTaO3 (110) (k,l) substrates.

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