Extended Data Fig. 2: Benchmarking ID versus ns and TLM. | Nature

Extended Data Fig. 2: Benchmarking ID versus ns and TLM.

From: Ballistic two-dimensional InSe transistors

Extended Data Fig. 2

a, Benchmarking ID versus ns at VDS = 0.5 V (refs. 29,71,72,73,74,75). The numbers in parentheses is the channel length (nm). b, SEM image of a set of devices for TLM. c, Total resistance versus channel length, leading to a minimum value of 83 Ω μm. The fluctuation of resistances between different electrodes in the long channels leads to some inaccuracy in the extracted 2RC.

Back to article page