Extended Data Fig. 6: Calculation of the ETO edge transport under B⊥.
From: Excitonic topological order in imbalanced electron–hole bilayers

To calculate the edge resistance, we consider a six-terminal Hall bar with edge separation under B⊥ and virtual contacts (Methods). (a) and (b) respectively show the calculated Rxx and Rxy as functions of B⊥ compared with the experimental data. Data Rxx in (a) is measured from the Hall-bar device C (see Extended Data Fig. 4), and data in (b) is extracted from Rxy in Fig. 2b. The inset to (a) schematically demonstrates the effect of B⊥ on the two edge channels. The error bars in (b) come from the uncertainties in the experimental Rxy in the topological EI regime.