Extended Data Fig. 3: Electric field and temperature dependent QAH effect at v = −1.
From: Observation of fractionally quantized anomalous Hall effect
Data are taken from device D(3.9°). a, ΔRxy versus magnetic field and electric field. Here, ΔRxy is obtained by taking the difference of Rxy between sweeping magnetic field up and down. ΔRxy starts to vanish around 150 mV/nm, signifying a topological phase transition. Large negative electric field values cannot be reached due to gate limits. b, Magnetic field dependence of Rxx and Rxy at selected temperatures. Rxy is nearly quantized even at 8 K. c, Rxx as a function of temperature at selected electric fields. Rxx is unsymmetrized and taken at 100 mT to avoid magnetic instability. d, Temperature dependent δRxy = |h/e2-Rxy| at selected electric fields, where Rxy is the antisymmetrized Hall resistance at ±100 mT. e, Colour plot of δRxy showing a phase transition near 150 mV/nm. f, Estimated thermal activation gap from the data in e. An energy gap of 35(2) K near zero electric field can be extracted, which is consistent with the value obtained from Rxx measurements, 32(2) K (see Fig. 2e).
