Extended Data Fig. 5: QFSG characterization.
From: Ultrahigh-mobility semiconducting epitaxial graphene on silicon carbide
(a) Low temperature STM of a 20 µm by 20 µm area of QFSG produced by hydrogen intercalation shows that it is defect free. (b) Raman map of a 25 µm × 25 µm area shows that it is completely covered with graphene with no bare SiC or buffer. The arrow labeled A points to a region with a I2D/IG = 3.73 (red scan) and the arrow labeled B points to a region with a I2D/IG = 1.75 (red scan). Variations of this magnitude are expected for graphene.
