Extended Data Fig. 7: Extracted device parameters for the 3-tier 3D integrated MoS2 and WSe2 FETs.
From: Three-dimensional integration of two-dimensional field-effect transistors
Distribution of \(SS\), \({I}_{{\rm{ON}}}\), and \({V}_{{\rm{TH}}}\) of 200 MoS2 FETs for a) tier 1, b) tier 2, and c) tier 3, corresponding to the transfer characteristics given in Fig. 3d-f. Distribution of \(SS\), \({I}_{{\rm{ON}}}\), and \({V}_{{\rm{TH}}}\) of 200 WSe2 FETs for d) tier 1, e) tier 2, and f) tier 3 corresponding to the transfer characteristics given in Fig. 3g-i.
