Extended Data Table 2 The device statistics for MoS2 FETs

From: Three-dimensional integration of two-dimensional field-effect transistors

  1. Statistics of the 200 devices for each channel length (\({L}_{{\rm{CH}}}\) = 300 nm and 1000 nm) for each tier for the 3-tier MoS2 and 200 devices of \({L}_{{\rm{CH}}}\) = 45 nm for each tier in the scaled 2-tier MoS2.
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