Fig. 1: Structural characterizations of amorphous Se-alloyed Te–TeOx.
From: Selenium-alloyed tellurium oxide for amorphous p-channel transistors
a, XRD spectra of as-evaporated and 225 °C-annealed Se-alloyed Te–TeOx thin films on glass. b,c, HRTEM images, the fast Fourier transform spot patterns (b, inset) and selected area electron diffraction pattern of 225 °C-annealed Se-alloyed Te–TeOx (c, inset). d, Te K-edge XANES spectra of the Se-alloyed Te–TeOx film and reference materials of elemental Te and TeO2. e, Corresponding Fourier transform of Te K-edge k3-weighted EXAFS spectra. The inset shows the tetragonal TeO2 bonding model. Scale bars, 5 nm (b), 20 nm (c) and 51/nm (c, inset). a.u., arbitrary units.
