Extended Data Fig. 6: Transfer characteristics of Se-alloyed Te-TeOx TFTs with different conditions.
From: Selenium-alloyed tellurium oxide for amorphous p-channel transistors
a. Transfer curves of Se-alloyed Te-TeOx TFTs fabricated with different channel thicknesses (channel annealing temperature is 225 °C). b. Transfer curves of Se-alloyed Te-TeOx TFTs deposited with different channel layer postannealing temperatures. All the hysteresis direction is counterclockwise.
