Extended Data Fig. 10: CMOS NAND.
From: Selenium-alloyed tellurium oxide for amorphous p-channel transistors

The rail-to-rail NAND gate with the working voltage of 10 and 8 V, respectively.
From: Selenium-alloyed tellurium oxide for amorphous p-channel transistors

The rail-to-rail NAND gate with the working voltage of 10 and 8 V, respectively.