Extended Data Fig. 2: Strain mapping of GaN in the MiGs nanostructures.
From: Observation of 2D-magnesium-intercalated gallium nitride superlattices
a–c, Multiple drift-corrected HAADF-STEM images containing a portion of MiGs structures in which GaN lattice is strained and a portion of unstrained GaN as reference regions outlined by yellow boxes. Green boxes highlight the areas where strain mapping was performed within the MiGs nanostructures. Magnified views of both the strain-mapped and reference regions are presented on the right side of each image. The maps for out-of-plane strain (perpendicular to Mg sheets) and in-plane strain (parallel to Mg sheets) are plotted based on atom column-by-atom column measurements (see Methods section for details). Scale bars, 5 nm. d–f, Summaries of the mean lattice parameters and strain values in a–c, respectively.
