Fig. 3: Fabrication and imaging of dualtronic device.
From: Using both faces of polar semiconductor wafers for functional devices
a–d, Device processing flow for the double-sided HEMT-LED. Starting from the as-grown heterostructures, the grey arrows follow the independent processing steps chronologically, with the metal-polar LED being processed after the N-polar HEMT. e, A 3D representation of the complete device. f, Optical microscope images of the as-processed sample, focused on the LEDs (right) and on the HEMTs (left). The N-polar HEMTs are oriented upwards, forming the uppermost surface. For scale, the diameter of the large LED anode contact is 140 μm. g, Scanning electron microscope images of the HEMTs on the N-polar GaN surface (bottom) and the LEDs on the metal-polar GaN surface (top).
