Extended Data Fig. 1: TEM characterization of amorphized β″-In2Se3 nanowire device upon application of d.c. voltage.
From: Electrically driven long-range solid-state amorphization in ferroic In2Se3
(a) Evolution of current in the nanowire device with time when the device is held at different fixed d.c. voltages. Amorphization occurs at 20 V and is preceded by a rapid decrease in current with time. (b) Low magnification TEM image of the nanowire device after amorphization. (c) EDX elemental mapping of indium and selenium in the amorphized region of the nanowire. (d) DF-TEM image of the nanowire after amorphization. The contrast from the crystal-amorphous interface can be seen at the left side of the nanowire, where a part of the interface is shown in the HR-TEM image in (e). Electron diffraction and HR-TEM image from the (f) paraelectric crystalline phase and (g) amorphous regions of the nanowire device. The dashed white lines in (d) indicate the regions where the images were combined. Scale bars: (b) 1 µm, (d) 200 nm, (e) 5 nm, (f) and (g) 2 nm.
