Extended Data Fig. 11: Electronic noise temperature (TN) as a function of bias for 3 graphene transistors each made with a different type of hBN crystal.
From: Electroluminescence and energy transfer mediated by hyperbolic polaritons
HPHT-hBN from NIMS, PDC-hBN from Lyon and APHT mono-isotopic h11BN from KSU. a, Electronic noise temperature of a device made with mono-isotopic boron nitride from KSU, USA (>99% 11B, fabricated at high temperature and atmospheric pressure). b, Electronic noise temperature of a device made with HPHT-hBN from NIMS, Japan. c, Electronic noise temperature of a device made with PDC-hBN from Lyon, France. While the Zener tunnelling regime leads to reduced electronic heating for both APHT- and HPHT-hBN at large bias, there is no such signature in PDC-hBN, confirming that radiative energy transfer is significantly reduced in this material.
