Extended Data Fig. 10: Reconfigurable conductive domain walls in ScGaN.
From: Electric-field-induced domain walls in wurtzite ferroelectrics
a, Displacement current measurement results for 50-nm ScGaN capacitors. b–d, AFM, PFM and c-AFM measurement results, showcasing the formation and erasure of voltage-dependent conductive domain walls near the edge of electrodes. e,f, Multicycle write/erase operations of conductive domain walls near the electrode edge. The ability to continuously write and erase these conductive channels and antipolar domains confirms the reconfigurability of the domain walls. The voltage profiles for each device are shown in e.
