Extended Data Fig. 5: Magnetic focusing for different gate designs.
From: Proximity screening greatly enhances electronic quality of graphene
a and b Measurements for reference devices with remote Si and graphite gates, respectively. Insets: Device micrographs and measurement configurations (current I21 between contacts 2 and 1; voltage V34 between 3 and 4; scale bars: 20 µm; T = 20 K). Color maps: Focusing resistance R21,34(n,B). Dashed curves indicate the expected position of magneto-focusing peaks (peak numbers P are labelled). Right panels: Vertical cuts from the maps at the labelled densities (in units of 1012 cm−2). c Transport mobilities found in our magneto-focusing experiments for devices with the three types of gates. The error bars indicate uncertainty in our evaluation of the extracted μ.
