Extended Data Fig. 3: Optical and SEM images of 2-inch MoS2 transferred by EDL.
From: Electrostatic-repulsion-based transfer of van der Waals materials
a, SEM image of the as-grown continuous monolayer MoS2 on SiO2/Si substrate by the MOCVD method. The dark boundaries in the images are grain boundaries of MoS2, which can already be seen on the as-grown MoS2 before transfer. When the MOCVD MoS2 is grown into a continuous monolayer, the bilayer growth first starts at the grain boundary, leading to different contrast in SEM images. Scale bar, 5 μm. b, Photograph showing the transferred MoS2 on a new 4-inch SiO2/Si wafer by EDL. Scale bar, 1 inch. c, Optical microscope images of as-transferred 2-inch continuous monolayer MoS2. The numbers 1, 2, 3, 4 and 5 correspond to the locations on the wafer shown in b. A scratch by tweezers is made at location 1 to distinguish between the substrate and MoS2. Scale bars, 10 μm. d, SEM images of as-transferred 2-inch continuous monolayer MoS2. The numbers 1, 2, 3, 4 and 5 correspond to the location on the wafer shown in b. Scale bars, 5 μm.
