Extended Data Fig. 6: Comparing transport properties of bulk single crystal and suspended device at T = 2 K.
The electric current and magnetic field are applied along the a-axis and c-axis, respectively. a Longitudinal resistivity ρxx for a device fabricated by the focused ion beam technique. b, c Magnetic field dependence of Hall resistivity ρyx and longitudinal conductivity σxx. d Hall conductivity σxy calculated for the device (red/blue) and for the bulk single crystal (gray line). The data are in good qualitative agreement. Inset: schematic measurement geometry. The hysteresis in ρxx and σxx is attributed to the texture of p-wave domains, as discussed further in Supplementary Fig. 4. To calculate the conductivities and resistivities of the device, we approximate the width and length of the central circular patch as a rectangular bar, implying significant systematic errors due to the geometry of the device. Note: The Hall conductivity data presented in the Main Text was obtained from bulk single crystals to suppress systematic measurement errors for the absolute value of σxy.
