Extended Data Fig. 10: Direct formation of EXIM shields.
From: Electromagnetic interference shielding using metal and MXene thin films
a, Schematic illustration and corresponding photographic images of the direct formation process. EXIM shields were seamlessly formed on PI substrates (thickness: 125 μm) and flexible ZnO Schottky diode samples. b, Shielding effectiveness of directly formed EXIM shields on a PI substrate. The shield configuration is Cu/Ti3C2Tx/Cu (100/200/100 nm) with a Cr-Al capping layer (10-10 nm). The shielding characteristics are nearly identical to those of lamination-based shields, including comparable average SE values and dynamic fluctuations in SE– frequency curves. c, Schottky diodes covered with directly formed EXIM shields. After shield formation, forward-biased conductance remains nearly unchanged; however, an increase in reverse-biased conductance is observed, which was not present in lamination-based shield formation. This suggests that the direct formation process may introduce relatively severe thermomechanical stress into the devices, resulting in degradation of the rectification ratio. d, EM noise detection test conducted under the same experimental conditions as in Fig. 4e–i and Supplementary Fig. 19e,f. The 0.4-μm-thick, directly formed EXIM shield effectively suppresses EM noise incident on the diode. Error bars in b are s.d. from 2–5 samples.
