Extended Data Fig. 4: IPCE and statistical data of Memsol performance metrics.
From: Integrated memristor for mitigating reverse-bias in perovskite solar cells
(a) The black curve shows the measured IPCE as a function of wavelength. The red curve represents the cumulative current density obtained by multiplying the IPCE data with the solar spectrum (photon flux) and integrating the product over the wavelength, yielding an estimated Jsc of 24 mA cm−2, in excellent agreement with the J–V measurement. (b) Set and reset voltage distributions obtained from 400 current–voltage measurements conducted on 10 Memsol devices under AM1.5 G illumination. (c) Statistics of Voc, Jsc, FF and PCE for 125 Memsols fabricated by three selective PL-177 deposition strategies: In Method 1 (M1) the cell area is masked either with conventional adhesive tapes or by first depositing NiOx and a SAM layer before PL-177 deposition, whereas in Method 2 (M2) a high-temperature-resistant blue dicing tape is used to minimize surface residue. Because the memristor-specific layers are thermally evaporated, the quality of the PL-177 layer largely determines device performance; the data reveal that Method 1 consistently produces lower PCE, driven by a reduced FF that is most plausibly linked to incomplete coverage of the hole-transport layer caused by masking-related residue. M1 and M2 were employed to integrate the memristor adjacent to the solar cell’s active region, whereas Method 3 (M3), based on lithography, was used for positioning the memristor directly within the active region of the solar cell. The hysteresis is defined as Unity minus the ratio between the PCE of forward (FW) and backward (BW) voltage sweep.
