Figure 5
Various lifetimes (solid symbols) of localized carriers in Ag-coated InGaN/GaN quantum wells measured by Okamoto et al. 42 (a) for different energy at room temperature and (b) for different temperatures. The solid lines are the calculated results with Eqs (16) and (18), independently or jointly, while the dashed lines represent the theoretical curves for overall luminescence lifetime with different parameters (a) and the nonradiative lifetime (b) respectively. The short dashed line in (b) indicates constant radiative lifetime.
