Figure 1
From: Pavlovian conditioning demonstrated with neuromorphic memristive devices
Device structure and electrical characterization. (a) HRTEM image of the interface, viewed along the [010] zone axis of Nb-SrTiO3. SAED of the Ni electrode in the inset shows the pattern of rings, demonstrating the polycrystalline feature of Ni. (b) Atomic-resolution HAADF investigations of the interface, viewed along the [010] zone axis of Nb-SrTiO3. (c) 50 cycles of current-voltage sweeping of the Ni/Nb-SrTiO3/Ti memristive device. The device structure is shown in the right inset. The device in HRS shows obviously rectifying characteristic while the one in LRS does not, as illustrated in the left inset. (d) Consecutive change of partially non-volatile conductance after pulse stimuli, exhibiting synaptic plasticity similarity. The read voltage is 0.05 V. (e) Change of the device conductance (ΔW) vs. the relative timing (Δt) of pre- and post-spike, showing the STDP behavior. The conductance change can be considered as the change of the synaptic weight.
