Figure 4 | Scientific Reports

Figure 4

From: Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE

Figure 4

(a) Absorption spectrum of 1 µm BN grown on sapphire substrate compared with the absorption spectra of 10 nm and 30 nm 2D layered h-BN. Inset shows the absorption peaks related to defect levels. (b) Cathodoluminescence at 77 K under different excitation energy and inset shows the CL peaks in deep UV region. (c) Wavelength distribution and (d) intensity distribution of photoluminescence mapping performed at room temperature for 2-inch 1 µm BN/sapphire wafer.

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