Figure 4 | Scientific Reports

Figure 4

From: Defect-Induced Luminescence Quenching vs. Charge Carrier Generation of Phosphorus Incorporated in Silicon Nanocrystals as Function of Size

Figure 4

Free carrier density and doping efficiency. (a) J-t-measurement of all samples at an E-field of 0.2 MV/cm. The transient currents scale within one order of magnitude with the increasing Si-content of the sample and are increased by up to two orders of magnitude by P-doping. (b) Density of charge carriers N F as function of electric field, measured at room temperature. Each data point represents a J-t measurement on a virgin contact, so that any influence from charging of a preceding measurement is avoided. The grey dotted lines indicate approximately the saturation point. For η D calculations, the background carrier density of the undoped reference samples at saturation is subtracted. (c) Doping efficiency η D as ratio of free carriers (at E-fields of ~0.1 to 0.6 MV/cm) and the number of P-atoms incorporated by Si NCs. The black solid line (spline) is just a guide to the eye.

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