Figure 6 | Scientific Reports

Figure 6

From: Defect-Induced Luminescence Quenching vs. Charge Carrier Generation of Phosphorus Incorporated in Silicon Nanocrystals as Function of Size

Figure 6

Formation energies of substitutional P-atoms in Si NCs. The results from Equation (4) using the doping efficiency are shown in red. The formation energies calculated using the results presented in ref. 44, i.e., \({E}_{form}=0.21008+4.98131/(0.5\,{d}_{NC})\) with energies in units of eV and NC-radii in Å, are shown in black. The grey dashed line represents the bulk formation energy44. The solid lines (splines) are just a guide to the eye.

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