Table 1 Data values of the structural and electrical characterization.

From: Defect-Induced Luminescence Quenching vs. Charge Carrier Generation of Phosphorus Incorporated in Silicon Nanocrystals as Function of Size

Sample

tSRON(:P) (nm)

CP at%

dNC (nm)

ρNC (1012 cm−2)

[P]APT

Epeak (MV/cm)

A2

2

0.71

1.9

0.8 ± 0.1

1.01 ± 1.6

 

A3

3

0.71

2.4

1.1 ± 0.2

1.47 ± 2.2

 

A4

4

0.71

3.0

1.5 ± 0.2

2.97 ± 3.5

 

A5

5

0.71

3.7

1.6 ± 0.2

5.43 ± 5.8

 

P2

2

0.71

1.9

0.8 ± 0.1

1.01 ± 1.6

~0.6

P3

3

0.48

2.4

1.1 ± 0.2

0.99 ± 1.5

0.315

P4

4

0.18

3.0

1.5 ± 0.2

0.75 ± 0.9

0.150

P5

5

0.18

3.7

1.6 ± 0.2

1.37 ± 1.5

0.115

R2

2

0

1.9

0.8 ± 0.1

0

–

R3

3

0

2.4

1.1 ± 0.2

0

–

R4

4

0

3.0

1.5 ± 0.2

0

–

R5

5

0

3.7

1.6 ± 0.2

0

–

  1. Here, tSRON(:P) denotes the Si-rich oxide layer thickness, CP the nominal P-concentration in SRON:P, dNC the mean NC size, ρNC the areal density of NCs per cm² and SL layer, [P]APT the average number of P-atoms per NC, and Epeak the electric field of the J-peak in Fig. 3a. Extrapolated values are in italic.
Back to article page