Figure 1
From: Inkjet Printing of High Performance Transistors with Micron Order Chemically Set Gaps
(a) A composite optical microscope image of the final completed device used for high frequency testing. G is the gate electrode, S is the source electrode, while the D’s are the common drain electrode. The structure is designed to allow RF testing with 500 micron pitch GSG probes. (b) A cross section of the top gate transistor design. Source, drain, and gate were all printed using nanoparticle silver solution.
