Figure 2 | Scientific Reports

Figure 2

From: Modulation of van der Waals and classical epitaxy induced by strain at the Si step edges in GeSbTe alloys

Figure 2

Evidence of strain in vdW bonded materials at the interface between substrate and epilayer. (a) Epitaxial orientation (Δα) of the GST obtained from XRD rocking curves as a function of β. Two functions are adopted for the fit (red points and green rhombuses for the centers of the sharp and broad peaks, respectively). The Nagai model is represented by the black squares. The inset depicts the modified Nagai model where l is the average terrace width. (b,c) XRD rocking curves centered on GST (00.15) planes at Qz = 1.80 Å−1 for β = 4 and 6°, respectively. The continuous light blue line is the fit. (d) Cross view [−211] high resolution HAADF-STEM micrograph for GST on Si (111) with β = 4°. The interface is highlighted by a dotted orange line.

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