Figure 8
From: Role of interfaces on the stability and electrical properties of Ge2Sb2Te5 crystalline structures
Resistivity measured at room temperature in samples prepared with different interfaces, as a function of annealing temperature. The dashed line indicates the value of 5 mOhm cm. The energy values indicated in the figure are the mobility gaps, obtained from the temperature variation of resistance in the range 40–100 °C.
