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Figure 1

From: Giant Magnetic Band Gap in the Rashba-Split Surface State of Vanadium-Doped BiTeI: A Combined Photoemission and Ab Initio Study

Figure 1

Magnetism and electronic structure of V-doped BiTeI at high and low temperature: schematics and measurements. (a) Sketch of the BiTeI TL structure with built-in V atoms and their magnetic moments disordered at high temperature. (b) Model dispersion relations of the spin-orbit split 2DEG state in a high temperature paramagnetic state, with α R being the Bychkov–Rashba coefficient. (c) Measured dispersion of the Rashba-split Te-terminated surface state of Bi0.985V0.015TeI at room temperature. (d–f) The same set as in (a–c), but for the ordered magnetic moments and a magnetic gap of 2Δ.

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