Figure 4
Results of Drift–Diffusion simulations of the MIS device in the high accumulation regime (V_g= +35 V), for different values of the injection barrier ΦB. (a) CF curves. The inset shows the dependence of the inflection frequency on ΦB. Experimental CF characteristics shown for comparison (cyan diamonds). (b) Phase of the carrier density at the semiconductor/insulator interface ∠n (0).
