Table 1 Parameters used in calculation (marked as “theory”) or from measurements (marked as “exp”) of the conductance spectroscopies at 5 K for various junctions.

From: Bi-2212/1T-TaS2 Van der Waals junctions: Interplay of proximity induced high-T c superconductivity and CDW order

 

Z

\({\tilde{{\boldsymbol{\sigma }}}}_{{\boldsymbol{N}}}\)μA/mV

\({{\boldsymbol{\Delta }}}_{{\bf{0}}}^{\exp }/{{\boldsymbol{\Delta }}}_{{\bf{0}}}^{{\boldsymbol{theory}}}\) meV

\({{\boldsymbol{\Delta }}}_{{\boldsymbol{p}}}^{\exp }/{{\boldsymbol{\Delta }}}_{{\boldsymbol{p}}}^{{\boldsymbol{theory}}}\) meV

\({{\boldsymbol{\Delta }}}_{{\boldsymbol{a}}}^{\exp }/{{\boldsymbol{\Delta }}}_{{\boldsymbol{a}}}^{{\boldsymbol{theory}}}\) meV

Γ0 meV

Γ p  meV

Γ a  meV

Ue–ph/Ep meV

\({{\bf{U}}}_{{\bf{e}}-{\bf{ph}}}^{{\boldsymbol{\ast }}}/{{\bf{E}}}_{{\bf{p}}}^{{\boldsymbol{\ast }}}\) meV

\(\frac{{{\boldsymbol{d}}}_{{\boldsymbol{S}}}}{{{\boldsymbol{\xi }}}_{{\bf{0}}}}/\frac{{{\boldsymbol{d}}}_{{\boldsymbol{vdW}}}}{{{\boldsymbol{\xi }}}_{{\bf{0}}}}/\frac{{{\boldsymbol{d}}}_{{\boldsymbol{N}}}}{{{\boldsymbol{\xi }}}_{{\bf{0}}}}\)

Junction-1

0.25

1.85

40/41.0

28/26.8

20/19.1

0.8

2.7

0.1

95/88

65/64

5.5/2/10

Junction-2

0.27

0.62

39/39.6

23/22.8

16/16.5

0.8

0.2

0.1

83/79

63/56

5/1.9/8

Junction-3

0.5

0.21

38/42.3

21/18.5

21/17.3

0.6

9.1

5.2

93/89

66/62

4.4/1.6/2

Junction-4

0.8

39/39.2

23/23.3

23/22.2

2.1

2.3

2.2

4/1.2/0.5

Junction-5

2.5

41/40.3

8.1

Bi-2212/graphite

1

55.62

42/40.5

6.1

  1. Z: BTK parameter; \({\tilde{\sigma }}_{N}\): normal conductance from measurement; Δ0: Bi-2212 intrinsic superconducting gap; Δ p : suppressed superconducting gap on S side; Δ a : proximity induced superconducting gap on N side; Γ0: quasiparticle lifetime parameter on S side; Γ p : quasiparticle lifetime parameter at interface on S side; Γ a : quasiparticle lifetime parameter at interface on N side; \({{\rm{U}}}_{{\rm{e}}-{\rm{ph}}}/{{\rm{U}}}_{{\rm{e}}-{\rm{ph}}}^{\ast }\): position of higher/lower energy scaled hump on conductance spectroscopy. \({{\rm{E}}}_{{\rm{p}}}/{{\rm{E}}}_{{\rm{p}}}^{\ast }\): position of higher/lower energy scaled peak/dip in positive/negative voltage regions of d 2 I/dV 2. d S /d vdW /d N : thickness of proximity region on S side, Van der Waals stacking distance and thickness of proximity region on N side.