Table 1 Growth conditions and electrical properties of representative samples. The concentration of dopants (C p ) and excess Cd in the melt are the intended concentrations used in the charge for growth. The uncertainty in the excess Cd is ± 2 × 1018 cm−3. Samples A1, A2, and B2 are p-type.

From: Self-compensation in arsenic doping of CdTe

Sample

Dopant

Growth

Excess Cd (cm−3)

C P (in melt) (cm−3)

C P (after growth) (cm−3)

N A (cm−3)

ρ (Ω.cm)

Activation (%)

Lifetime (ns)

A1

As

Cd-rich As-doped

6 × 1018

5.5 × 1017

1.2 × 1017

(3–5) × 1013

~800

0.02–0.04

6.5

A2

As

Cd-rich As-doped

6 × 1018

1.1 × 1017

(5–10) × 1016

(1–2) × 1015

~20

1–3

~1.4

B1

None

Cd-rich Undoped

5 × 1018

None

None

N/A

N/A

N/A

245–300

B2

None

Te-rich Undoped

N/A

None

None

~1 × 1015

100–500

N/A

31–236