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Figure 1

From: Diffraction phase microscopy imaging and multi-physics modeling of the nanoscale thermal expansion of a suspended resistor

Figure 1

(a) Side view of the suspended resistor showing the material and device structure. The heights of Ni/Au/Ni, Si3N4, Ge, SiO2 and Si are 110 nm, 1000 nm, 80 nm, 1024 nm and 500 μm, respectively. (b) Top view of the suspended resistor. The yellow area in the top view indicates the pattern of the Ni/Au/Ni layer and the orange area indicates that the SiO2 layer is exposed. (c) Zoomed-in view of the rectangular region inscribed in the red circle in (b). This rectangular area represents the field of view for the epi-DPM images.

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