Figure 7

The retention of the Pt/BFO/SiO x /Si memristors. Current as a function of time. (a) The device with 2 nm thick BFO film; (b) The device with 3.5 nm thick BFO film; (c) The device with 5 nm thick BFO film.

The retention of the Pt/BFO/SiO x /Si memristors. Current as a function of time. (a) The device with 2 nm thick BFO film; (b) The device with 3.5 nm thick BFO film; (c) The device with 5 nm thick BFO film.