Figure 3
From: Generation of megahertz-band spin currents using nonlinear spin pumping
AO-induced spin currents in MHz-band. (a,b) Frequency dependence of V in the MHz range in Pt/Y3Fe5O12 (a) and Pt/SiO2/Y3Fe5O12 (b) at various values of P in. Green points indicate frequencies of the AO, δf 1+, at each P in (see Fig. 2d). The inset to (b) shows the P refl spectrum for the Pt/SiO2/Y3Fe5O12 film at P in = 531 mW. The incident microwave frequency was 3.23 GHz. H was set at 545 Oe. (c) P in dependence of the peak height h AO of the GHz AO sidepeak at δf 1+ (h AO) and the MHz-band voltage peak (h ISHE), measured in the Pt/Y3Fe5O12 film (a). (d) P in dependence of the half width of the peak at δf 1+ for the GHz AO sidepeak, Δw AO, (Fig. 2d) and the MHz-band voltage peak, Δw ISHE, (a).
