Figure 1
From: Balancing Hole and Electron Conduction in Ambipolar Split-Gate Thin-Film Transistors
PDPP3T ambipolar transistor architecture and characteristics as a function of air exposure time. (a) PDPP3T molecular structure, its schematic and the energy band level. (b) Measured (symbols) transfer characteristics of PDPP3T ambipolar transistor at VD = −30 V in ambient atmosphere (blue) and in vacuum after annealing (red). Lines indicate results from 2D numerical simulations. Blue (green) line: simulation of air exposed PDPP3T OTFTs with (without) trap states. Red line: simulation of vacuum annealed PDPP3T OTFTs. (c) Measured transfer characteristics at VD = −50 V and VD = −30 V as a function of the air exposure time. (d) Turn-on voltage (VTO) of PDPP3T transistor as a function of the air exposure time. (e) Extracted contact resistance value of PDPP3T transistor as a function of the air exposure time.
