Figure 4
From: Balancing Hole and Electron Conduction in Ambipolar Split-Gate Thin-Film Transistors

Electron and hole density of states. The dashed line is the overall DOS approximated by the sum of two Gaussian functions. The tail (red line) and deep (green line) states are also shown. The electron DOS parameters are the following. Total density of LUMO tail and deep states are Nte = 2 × 1021 cm−3 and Nde = 1 × 1020 cm−3, respectively. The energy width of the LUMO tail and deep states are σte = 80 meV and σde = 120 meV, respectively. The hole DOS parameters are the following. Total density of HOMO tail and deep states are Nth = 2 × 1021 cm−3 and Ndh = 1 × 1020 cm−3, respectively. The energy width of the HOMO tail and deep states are σth = 60 meV and σdh = 120 meV, respectively. An additional Gaussian distribution of trap states (full blue line) describes the oxygen-induced. The Gaussian distribution is located at 0.35 eV below the LUMO level, with a total density of states NtO2 = 2 × 1020 cm−3 and a disorder energy width σtO2 = 50 meV. The other simulation parameters are provided in the Methods section.