Figure 5
From: Balancing Hole and Electron Conduction in Ambipolar Split-Gate Thin-Film Transistors
Carrier distribution in PDPP3T ambipolar transistors. 2D numerical simulations. The applied voltages are VD = −30 V, and VS = 0 V. (a) P-type operation (VG = −40 V) and (b) N-type operation (VG = 40 V) without the atmospheric effects. (c) P-type operation (VG = −40 V) and (d) N-type operation (VG = 40 V) with the atmospheric effects.
